IPD135N03L G – INFINEON

Electronic Components
 
Part Number:
IPD135N03L G
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
MALAYSIA
 
 
Description:

N‑Channel, 30 V, 30 A, 11.3 mOhm MOSFET, TO252‑3 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPD135N03L G is an N-Channel MOSFET manufactured by Infineon Technologies. This component is designed for switching and amplification applications, offering efficient power management capabilities. The device features a drain-source voltage of 30V and a continuous drain current of 30A. It is housed in a TO252-3 package, suitable for surface mount assembly.

Key Features

  • N-Channel enhancement mode
  • 30V Drain-Source Voltage (Vds)
  • 30A Continuous Drain Current (Id)
  • Low on-resistance: 11.3 mOhm (Rds(on))

Applications

This MOSFET is commonly used in various electronic systems requiring efficient power control and switching. Its characteristics make it suitable for deployment in diverse settings.

  • DC-DC converters
  • Load switching
  • Motor control circuits
 
 
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