IPD110N12N3 G – INFINEON
Part Number:
IPD110N12N3 G
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
3
COO:
MALAYSIA
Description:
N-Channel, 120 V, 75 A, 9.2 mOhm MOSFET, TO252-3 Package
Datasheet:
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Product Details:
Overview
The IPD110N12N3 G is an N-Channel enhancement mode MOSFET manufactured by INFINEON. This transistor is designed for switching applications requiring efficient power handling. It features a drain-source voltage rating of 120V and a continuous drain current capability of 75A. The device exhibits a low on-state resistance of 9.2 mOhms. It is supplied in a TO252-3 package for surface mount assembly.
Key Features
- N-Channel Enhancement Mode
- VDS: 120 V
- ID: 75 A
- RDS(on): 9.2 mΩ
Applications
This MOSFET is suitable for use in various power management and switching circuits. Its characteristics make it appropriate for designs where efficiency and compact size are important considerations. Common deployment scenarios include:
- Synchronous Rectification
- DC-DC Converters
- Motor Control
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