IPD15N06S2L-64 – INFINEON

Part Number:

IPD15N06S2L-64

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

55 V, 19 A N-Channel MOSFET, 64 mΩ, TO‑252 Package

Datasheet:

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Product Details:

Overview

The IPD15N06S2L-64 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This component is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 55V and a continuous drain current of 19A. The MOSFET exhibits a typical on-state resistance of 64 mΩ and is supplied in a TO-252 package for surface mount assembly.

Key Features

N-Channel Enhancement Mode
55V Drain-Source Voltage (Vds)
19A Continuous Drain Current (Id)
64 mΩ On-State Resistance (Rds(on))

Applications

This MOSFET is suitable for various power switching and control circuits. Its characteristics make it appropriate for use in systems requiring efficient energy conversion and management.

DC-DC Converters
Motor Control Circuits
Load Switching