TSM4NB60CP – TAIWAN SEMICONDUCTOR

Part Number:

TSM4NB60CP

Manufacturer:

TAIWAN SEMICONDUCTOR

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

TAIWAN

Description:

N-Channel MOSFET, 600 V, 4 A, TO‑252 Package

Datasheet:

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Product Details:

Overview

The TSM4NB60CP is an N-Channel enhancement mode MOSFET manufactured by TAIWAN SEMICONDUCTOR. This device is designed for high voltage switching applications, offering a drain-source voltage (Vds) rating of 600V and a continuous drain current (Id) of 4A. It is supplied in a TO-252 package, suitable for surface mount assembly.

Key Features

600V Drain-Source Voltage (Vds)
4A Continuous Drain Current (Id)
N-Channel Enhancement Mode
TO-252 Package

Applications

This MOSFET is commonly used in power electronics circuits requiring efficient high-voltage switching. Its characteristics make it suitable for various industrial and consumer applications.

Switch-Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
High Voltage DC-DC converters