TSM4N80CI C0G – TAIWAN SEMICONDUCTOR

 
Part Number:
TSM4N80CI C0G
 
 
Manufacturer:
 
 
Date Code:
G809A
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
 
 
Description:

N-Channel MOSFET, 4A, 800V, 3-Pin ITO-220, Taiwan Semiconductor.

 
 
Datasheet:
 
 
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Product Details:

Overview

The TSM4N80CI C0G is an N-Channel enhancement mode MOSFET manufactured by Taiwan Semiconductor. This device is designed for high-voltage switching applications, offering a drain-source voltage rating of 800V and a continuous drain current of 4A. It is packaged in a 3-Pin ITO-220 through-hole package.

Key Features

  • 800V Drain-Source Voltage (Vds)
  • 4A Continuous Drain Current (Id)
  • N-Channel Enhancement Mode
  • ITO-220 Package

Applications

This MOSFET is commonly used in power electronics circuits requiring high voltage handling capability. Its characteristics make it suitable for various applications where efficient switching is needed.

  • Switch-Mode Power Supplies (SMPS)
  • High Voltage DC-DC Converters
  • Power Factor Correction (PFC) circuits
 
 
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