IPP60R199CPXKSA1 – INFINEON
Part Number:
IPP60R199CPXKSA1
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N-Channel MOSFET, 650V, 16A, 139W, PG-TO220-3.
Datasheet:
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Stock Quantity: 2
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 1.19 |
| 10+ | |
| 50+ | |
| 100+ |
2 in stock
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Product Details:
Overview
The IPP60R199CPXKSA1 is an N-Channel Power MOSFET manufactured by Infineon. This component is designed for high-voltage switching applications, offering a drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 16A. It has a power dissipation rating of 139W and is packaged in a PG-TO220-3 through-hole mounting configuration.
Key Features
- N-Channel enhancement mode
- 650V Drain-Source Voltage (Vds)
- 16A Continuous Drain Current (Id)
- 139W Power Dissipation (Pd)
Applications
This MOSFET is typically used in power electronics circuits requiring efficient and reliable switching performance. Its high voltage and current handling capabilities make it suitable for various industrial and consumer applications.
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- Lighting ballast
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