2N7002T-7-F – DIODES INCORPORATED

Part Number:

2N7002T-7-F

Manufacturer:

DIODES INCORPORATED

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 60 V, 115 mA, SOT‑523 Package

Datasheet:

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Product Details:

Overview

The 2N7002T-7-F is an N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This transistor is designed for low voltage, low current switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 115mA. The 2N7002T-7-F is supplied in a compact SOT-523 surface mount package.

Key Features

N-Channel Enhancement Mode
60V Drain-Source Voltage (Vds)
115mA Continuous Drain Current (Id)
Low On-Resistance (Rds(on))

Applications

This MOSFET is commonly used in various switching and amplification circuits where space is a constraint. Its low threshold voltage makes it suitable for direct logic-level interfacing. It is often deployed in portable devices and battery-powered systems.

Load Switching
Small Signal Amplification
DC-DC Conversion