PSMN7R6-100BSE – NXP

Part Number:

PSMN7R6-100BSE

Manufacturer:

NXP

Date Code:

21+

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 100V Vds, 80A Id, D2PAK Package.

Datasheet:

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Product Details:

Overview

The PSMN7R6-100BSE is an N-Channel enhancement mode MOSFET manufactured by NXP. This transistor is designed for high-efficiency switching applications, offering a drain-source voltage (Vds) rating of 100V and a continuous drain current (Id) capability of 80A. It is supplied in a D2PAK surface-mount package, suitable for automated assembly and efficient heat dissipation.

Key Features

N-Channel Enhancement Mode
100V Drain-Source Voltage (Vds)
80A Continuous Drain Current (Id)
Low On-State Resistance (Rds(on))

Applications

This N-Channel MOSFET is commonly used in power management circuits and switching regulators. Its voltage and current handling capabilities make it suitable for various industrial and commercial electronic systems requiring efficient power control.

DC-DC Converters
Motor Control Circuits
Power Supplies