BUK9575-100A,127 – NXP
N-Channel MOSFET, 100 V, 75 A, TO-220 Package, Through-Hole
Stock Quantity: 326
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 4.16 |
| 10+ | |
| 50+ | |
| 100+ |
326 in stock
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The BUK9575-100A,127 is an N-channel enhancement mode MOSFET fabricated in a TrenchMOS architecture and housed in a through-hole TO-220 package. This device is rated for a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 75A, subject to thermal limitations imposed by the package. The maximum drain-source resistance (Rds(on)) is specified at 0.013 Ohms at a gate-source voltage (Vgs) of 10V, facilitating efficient switching performance in high-current applications. The device features a gate threshold voltage (Vgs(th)) typically between 1V and 2.5V. Its robust design makes it suitable for applications such as DC-DC converters, motor control, and load switching where high efficiency and reliable operation are critical. The TO-220 package provides adequate heat dissipation when properly heatsinked.
