BSL306N H6327 – INFINEON
MOSFETs N-Ch 30V 2.3A SOT-23-3
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The BSL306N H6327, manufactured by Infineon, is an N-channel enhancement mode logic level MOSFET. This device is fabricated using Infineon’s OptiMOS™ technology, resulting in a low on-state resistance (Rds(on)) typically in the milliohm range at Vgs=10V. Key parameters include a drain-source voltage (Vds) rating, a gate-source voltage (Vgs) rating, and a continuous drain current (Id) rating dependent on the specific application and thermal management. The H6327 suffix indicates specific manufacturing and lot traceability information. Supplied in original reels, each containing 3000 units, with a total of four reels, this part is designed for automated pick-and-place assembly in high-volume manufacturing environments. The device is suitable for applications such as DC-DC conversion, load switching, and motor control where efficient power management is critical.
