BSL308PE H6327 – INFINEON

Part Number:

BSL308PE H6327

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

Dual 30 V, 2 A, 62 mOhm P‑Channel MOSFET, TSOP‑6 Package

Datasheet:

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Product Details:

Overview

The BSL308PE H6327 is a dual P-Channel Enhancement Mode MOSFET from Infineon Technologies. This device features a drain-source voltage of 30V and a continuous drain current of 2A. It exhibits a typical on-state resistance of 62 mOhm. The component is supplied in a space-saving TSOP-6 surface mount package.

Key Features

30V Drain-Source Voltage
2A Continuous Drain Current
62 mOhm On-State Resistance (typical)
Logic Level Input
TSOP-6 Package

Applications

This dual P-Channel MOSFET is suited for various power management and switching functions. Its compact size and efficient performance make it suitable for use in portable devices and other space-constrained applications.

Load Switching
Power Management Circuits
DC-DC Conversion