PMV120ENEAR – NXP

Part Number:

PMV120ENEAR

Manufacturer:

NXP

Date Code:

RoHS:

RoHS Compliant

MSL:

–

COO:

Description:

MOSFET, N-CH, 60V, 2.1A, Trench, Automotive, TO-236AB

Datasheet:

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Product Details:

Overview

The PMV120ENEAR is an N-channel enhancement mode MOSFET manufactured by NXP Semiconductors. This transistor utilizes Trench MOSFET technology and is designed for automotive applications. It features a drain-source voltage rating of 60V and a continuous drain current of 2.1A. The component is supplied in a compact TO-236AB (SOT-23) package.

Key Features

N-Channel Enhancement Mode
60V Drain-Source Voltage
2.1A Continuous Drain Current
Trench MOSFET Technology

Applications

This MOSFET is suited for various switching and amplification tasks within automotive electronic systems. Its characteristics make it appropriate for use in circuits requiring efficient power control and low on-state resistance.

Automotive Lighting Control
DC-DC Conversion
Load Switching