N-Channel MOSFET: 30V, 40A, 62.5W, PowerPAK SO-8, surface mount.
Stock Quantity: 115
Selling Unit: Each
| Quantity | Price (ex VAT) |
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| 1+ | 1.13 |
| 10+ | |
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115 in stock
The SIRA04DP-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for switching and amplification applications, offering a drain-source voltage of 30V and a continuous drain current of 40A. It features a power dissipation of 62.5W and is packaged in a PowerPAK SO-8 for surface mount assembly.
This MOSFET is commonly employed in various power management and control circuits. Its characteristics make it suitable for use in systems requiring efficient switching and moderate power handling capabilities.