SIRA14BDP-T1-GE3 – VISHAY

Part Number:

SIRA14BDP-T1-GE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N-Channel MOSFET, 30 V, 21 A, 5.4 mOhm, PPAK SO-8 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The SIRA14BDP-T1-GE3 is an N-Channel enhancement mode MOSFET manufactured by VISHAY. This transistor is designed for power switching applications, offering a drain-source voltage of 30V and a continuous drain current of 21A. It features a low on-state resistance of 5.4 mOhm and is provided in a PPAK SO-8 surface mount package.

Key Features

N-Channel Enhancement Mode
30V Drain-Source Voltage
21A Continuous Drain Current
Low On-State Resistance (5.4 mOhm)
PPAK SO-8 Package

Applications

This MOSFET is suitable for various power management and switching circuits. Its low resistance minimizes power losses, making it efficient in different electronic systems.

DC-DC Converters
Load Switching
Power Management in Portable Devices