STD3NK60Z-1 – STMicroelectronics

 
Part Number:
STD3NK60Z-1
 
 
Manufacturer:
 
 
Date Code:
220
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

N‑Channel MOSFET, 600 V, 2.4 A, 3‑Pin (3+Tab) TO‑220 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The STD3NK60Z-1 is a power MOSFET manufactured by STMicroelectronics. This N-Channel enhancement mode transistor is designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 2.4A. The component is supplied in a through-hole TO-220 package with three pins and a mounting tab for heatsinking.

Key Features

  • N-Channel enhancement mode
  • 600V Drain-Source Voltage (Vds)
  • 2.4A Continuous Drain Current (Id)
  • Low gate charge (Qg)
  • TO-220 package for through-hole mounting

Applications

This MOSFET is suitable for various power electronics circuits requiring efficient and reliable switching. Its high voltage capability makes it useful in applications where voltage spikes or high DC voltages are present.

  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • High-voltage DC-DC converters
 
 
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