STD3NA50 – STMicroelectronics
Part Number:
STD3NA50
Manufacturer:
Date Code:
07+
RoHS:
MSL:
COO:
Description:
2.7 A, N-Channel MOSFET
Datasheet:
Spotted a problem with product information? – let us know
ORDER NOW
Stock Quantity: 2
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 3.29 |
| 10+ | |
| 50+ | |
| 100+ |
2 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
- We can ship on your DHL or UPS account if required
- Any import duties or taxes are the responsibility of the receiver
Product Details:
The STD3NA50 is an N-channel enhancement-mode power MOSFET fabricated using STMicroelectronics’ proprietary MDmesh™ DMOS technology. It is characterized by a drain-source breakdown voltage (Vds) of 500V and a continuous drain current (Id) rating of 2.7A at 25°C case temperature. The device exhibits a typical on-state resistance (Rds(on)) of 2.8 Ohms at Vgs = 10V, facilitating efficient power switching. The gate-source threshold voltage (Vgs(th)) is typically 3V. The STD3NA50 is designed for high-voltage, high-speed switching applications, and its low gate charge (Qg) minimizes switching losses. Its avalanche ruggedness is specified, enabling reliable operation in demanding power circuits. The device is suitable for applications such as switch-mode power supplies, motor control, and lighting ballasts.
Spotted a problem with product information? – let us know
Related products
PART NUMBER
CATEGORY
MANUFACTURER
