P‑Channel MOSFET, 20 V, 9 A, 0.014 Ohm, Single Element
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The SI4463DY-E3 is a single P-Channel MOSFET manufactured by SILICONIX. This component is designed for power switching applications requiring efficient load control. It features a drain-source voltage rating of 20V and a continuous drain current capability of 9A. The device exhibits a low on-state resistance of 0.014 Ohm, minimizing power dissipation. It is supplied in a standard surface-mount package.
This P-Channel MOSFET is suitable for various power management and switching tasks. Its low on-resistance makes it appropriate for circuits where minimizing losses is crucial. It is commonly used in applications where a high-side switch is required.