BCP56T1G – TBC
NPN BJT, 80V, 1A, 130MHz, 1.5W, SOT-223 (TO-261), Surface Mount.
Stock Quantity: 375
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.29 |
| 10+ | |
| 50+ | |
| 100+ |
375 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
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- Any import duties or taxes are the responsibility of the receiver
Overview
The onsemi BCP56T1G is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification in moderate power applications. Its critical operational characteristic lies in its 80V collector-emitter breakdown voltage, enabling it to handle significant voltage swings. A key design consideration for this device is managing its 1.5W power dissipation; while capable of 1A collector current, thermal management through adequate PCB copper area or heatsinking is paramount to prevent junction temperature excursions beyond its 150°C limit, ensuring long-term reliability.
Key Features
- Collector-Emitter Breakdown Voltage (Vceo): 80 V
- Continuous Collector Current (Ic): 1 A
- Maximum Power Dissipation (Pd): 1.5 W
- Transition Frequency (fT): 130 MHz
- DC Current Gain (hFE) Min: 40 @ 150mA, 2V
- Package: SOT-223 (TO-261-4, TO-261AA)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-frequency signal amplification in audio pre-amplifiers.
- General-purpose switching in DC-DC converters.
- Driver circuitry for small relays and solenoids.
- Voltage regulation stages in linear power supplies.
