BC858CLT1 – ONSEMI
PNP Transistor, 30 V, 100 mA, SOT‑23 Package
Stock Quantity: 798
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.15 |
| 10+ | |
| 50+ | |
| 100+ |
798 in stock
Contact us for volume pricing
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- 6 month warranty on all stock items
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Overview
The ONSEMI BC858CLT1 is a general-purpose PNP bipolar junction transistor (BJT) designed for low-power amplification and switching applications. Its key operational characteristic is a high DC current gain (hFE) of up to 420 at 100 mA, enabling efficient signal amplification. A critical design consideration when utilizing this device in high-frequency circuits is its gain bandwidth product (fT) of 100 MHz; exceeding this limit can lead to significant signal degradation and instability, necessitating careful impedance matching and filtering in the associated circuitry.
Key Features
- PNP Silicon Bipolar Junction Transistor
- Maximum DC Collector Current: 100 mA
- Collector-Emitter Voltage (VCEO): 30 V
- DC Collector/Base Gain (hFE) Min: 420
- Gain Bandwidth Product (fT): 100 MHz
- Package: SOT-23-3 (2.9 mm x 1.3 mm x 0.94 mm)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-frequency audio amplification stages
- General-purpose switching in control circuits
- Signal level shifting in discrete logic interfaces
- Bias current generation for active components
