BC850B – NXP
NPN Bipolar Transistor, 0.1 A, 45 V, 0.25 W, SOT‑23 Package
Stock Quantity: 8987
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.37 |
| 10+ | |
| 50+ | |
| 100+ |
8987 in stock
Contact us for volume pricing
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- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
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- Any import duties or taxes are the responsibility of the receiver
Overview
The Diotec Semiconductor BC850B is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power switching and amplification applications. Its key operational characteristic is its 45V collector-emitter breakdown voltage and 100mA continuous collector current capability, suitable for driving small loads. A critical design consideration when utilizing this device is managing its 250mW maximum power dissipation; exceeding this limit, especially in higher ambient temperatures or with continuous high-duty cycle operation, can lead to thermal runaway and premature component failure, necessitating careful thermal management or paralleling for higher current requirements.
Key Features
- Collector-Emitter Breakdown Voltage (VCEO): 45 V
- Continuous Collector Current (IC): 100 mA
- DC Current Gain (hFE): 200 (min) @ 2mA, 5V
- Transition Frequency (fT): 300 MHz
- Maximum Power Dissipation (PD): 250 mW
- Package: SOT-23-3 (TO-236)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-power signal amplification in audio pre-amplifiers.
- Switching control for small relays and LEDs.
- Bias current generation for active components.
- Level shifting in digital logic interfaces.
