2N7002-7-F – DIODES INCORPORATED
N-Channel 60V 115mA 370mW MOSFET, SOT-23-3, Surface Mount
Stock Quantity: 1989
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.02 |
| 10+ | |
| 50+ | |
| 100+ |
1989 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
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Overview
The DIODES INCORPORATED 2N7002-7-F is a highly efficient N-channel MOSFET designed for low-power switching applications. Its defining characteristic is the exceptionally low on-resistance (RDS(on)), which minimizes conduction losses and maximizes power transfer efficiency, a critical factor in battery-powered portable devices. However, designers must carefully consider the trade-off between achieving this low RDS(on)and managing the device’s inherent gate capacitance, which can limit switching speed in very high-frequency circuits, necessitating careful gate drive design.
Key Features
- Low On-Resistance: Typically 6 Ω at VGS= 10V, ID= 200mA
- Low Gate Threshold Voltage: VGS(th)= 2V (Max) at ID= 250µA
- Low Input Capacitance: Ciss= 5pF (Typical)
- Fast Switching Speed
- Small Surface Mount Package: SOT23 (2.9mm x 2.6mm x 1.3mm)
- AEC-Q101 Qualified for High Reliability
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-side load switching for portable electronics
- Digital logic level translation
- Battery management and power sequencing
- General-purpose analog signal switching
