ZXTN19055DZTA – DIODES INCORPORATED
BJT NPN Transistor, 55V, 6A, 200MHz, 2.1W, SOT-89-3, SMD.
Stock Quantity: 270
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.69 |
| 10+ | |
| 50+ | |
| 100+ |
270 in stock
Contact us for volume pricing
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- 6 month warranty on all stock items
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Overview
The ZXTN19055DZTA is an NPN bipolar junction transistor (BJT) manufactured by DIODES INCORPORATED. This discrete semiconductor device is designed for amplification and switching applications, offering a collector-emitter voltage rating of 55V and a continuous collector current of 6A. It is housed in a surface-mount SOT-89-3 package and features a transition frequency of 200MHz, with a power dissipation of 2.1W.
Key Features
- NPN Transistor Polarity
- 55V Collector-Emitter Voltage (Vceo)
- 6A Continuous Collector Current (Ic)
- 200 MHz Transition Frequency (Ft)
Applications
This NPN transistor is commonly utilized in various electronic circuits requiring current amplification or switching. Its characteristics make it suitable for deployment in circuits where moderate voltage and current handling are necessary.
- DC-DC Converters
- Motor Control Circuits
- Linear Regulators
