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ZXM61P02FTA – DIODES INCORPORATED

DIODES INCORPORATED ZXM61P02FTA
 
Part Number:
ZXM61P02FTA
 
 
Manufacturer:
DIODES INCORPORATED
 
 
Date Code:
UNK
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

P-Channel MOSFET, 20V, 900mA, 625mW, SOT-23-3.

 
 
Datasheet:
 
 
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Product Details:

Overview

The ZXM61P02FTA is a P-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This transistor is designed for low voltage, low current switching applications. It features a drain-source voltage rating of 20V and a continuous drain current of 900mA. The device is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. The power dissipation is rated at 625mW.

Key Features

  • P-Channel MOSFET configuration
  • 20V Drain-Source Voltage (Vds)
  • 900mA Continuous Drain Current (Id)
  • SOT-23-3 Surface Mount Package
  • 625mW Power Dissipation

Applications

This P-Channel MOSFET is commonly used in portable devices and power management circuits where efficient switching is required. Its small size and low voltage operation make it suitable for a variety of electronic systems.

  • Load Switching
  • Power Management
  • DC-DC Conversion
 
 
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