ZVN3306A – DIODES INCORPORATED
N-Channel MOSFET, 60V, 270mA, 625mW, TO-92, Through-Hole
Stock Quantity: 58
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.58 |
| 10+ | |
| 50+ | |
| 100+ |
58 in stock
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- 6 month warranty on all stock items
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Overview
The ZVN3306A is a discrete N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This transistor is designed for low power switching applications, offering a drain-source voltage rating of 60V and a continuous drain current of 270mA. It is housed in a through-hole TO-92 package, providing ease of mounting on printed circuit boards. The device has a power dissipation of 625mW.
Key Features
- N-Channel Enhancement Mode
- 60V Drain-Source Voltage
- 270mA Continuous Drain Current
- TO-92 Package Type
Applications
This MOSFET is suitable for various low-power electronic circuits requiring switching or amplification. Its characteristics make it useful in designs where a small, through-hole component is needed. It is often used in general purpose switching and amplification circuits.
- Small Signal Amplification
- Low-Side Switching
- Relay Driving
