TSM1NB60CH C5G – TAIWAN SEMICONDUCTOR
Part Number:
TSM1NB60CH C5G
Manufacturer:
Date Code:
UNK
RoHS:
RoHS Compliant
MSL:
1
COO:
Description:
N-Channel MOSFET Transistor, 600 V, 1 A, 3-Pin TO-251 Package
Datasheet:
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Stock Quantity: 823
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.8 |
| 10+ | |
| 50+ | |
| 100+ |
823 in stock
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Product Details:
Overview
The TSM1NB60CH C5G is an N-Channel enhancement mode MOSFET manufactured by TAIWAN SEMICONDUCTOR. This transistor is designed for high-voltage switching applications, offering a drain-source voltage rating of 600V and a continuous drain current of 1A. It is supplied in a 3-pin TO-251 package, facilitating through-hole mounting on printed circuit boards.
Key Features
- N-Channel Enhancement Mode
- 600V Drain-Source Voltage (Vds)
- 1A Continuous Drain Current (Id)
- TO-251 Package Type
Applications
This MOSFET is suitable for use in power electronics circuits requiring efficient high-voltage switching. Its characteristics make it applicable in various industrial and consumer electronic devices.
- Switch-Mode Power Supplies (SMPS)
- High Voltage DC-DC Converters
- Power Factor Correction (PFC) circuits
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