TP0610KL-TR1-E3/ASH – SILICONIX

The TP0610KL-TR1-E3 is a P-channel enhancement-mode MOSFET fabricated using trench technology. This device is characterized by a Vgs(th) of -1.0V (typical) and a Vgs(th) range of -0.5V to -1.5V, suitable for logic-level gate drive applications. The ‘TR1’ suffix indicates tape and reel packaging for automated assembly, while the ‘E3’ denotes compliance with RoHS standards, indicating lead-free construction. Key electrical parameters include a drain-source breakdown voltage (Vds) of -60V, continuous drain current (Id) of -0.23A at a Vgs of -10V, and pulsed drain current (Idm) of -1.3A. The on-resistance (Rds(on)) is typically 4.5 ohms at Vgs = -10V and Id = -0.23A. The device’s low gate charge (Qg) minimizes switching losses, making it suitable for low-power switching applications where efficiency is critical.