TK65A10N1,S4X(S – TOSHIBA
Part Number:
TK65A10N1,S4X(S
Manufacturer:
Date Code:
2014
RoHS:
RoHS Compliant
MSL:
–
COO:
Description:
N-Channel MOSFET, 100 V, 148 A, U-MOS-H, TO-220SIS
Datasheet:
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Stock Quantity: 125
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 1.02 |
| 10+ | |
| 50+ | |
| 100+ |
125 in stock
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Product Details:
Overview
The TK65A10N1,S4X(S is an N-Channel enhancement mode MOSFET manufactured by TOSHIBA. This device is designed for switching applications requiring efficient power control. It features a drain-source voltage rating of 100V and a continuous drain current capability of 148A. The MOSFET utilizes TOSHIBA’s U-MOS-H process technology and is packaged in a TO-220SIS through-hole mounting configuration.
Key Features
- N-Channel enhancement mode
- 100V Drain-Source Voltage (VDS)
- 148A Continuous Drain Current (ID)
- U-MOS-H process technology
- TO-220SIS package
Applications
This N-Channel MOSFET is suitable for various power management and switching circuits. Its characteristics make it appropriate for use in systems requiring high current handling and voltage control.
- DC-DC converters
- Motor control circuits
- Power supplies
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