TK35E08N1,S1X(S – TOSHIBA
Part Number:
TK35E08N1,S1X(S
Manufacturer:
Date Code:
18
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N-Channel MOSFET, 80V, 55A, 72W, TO-220; Through-hole transistor for switching and amplification.
Datasheet:
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Stock Quantity: 100
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.78 |
| 10+ | |
| 50+ | |
| 100+ |
100 in stock
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Product Details:
Overview
The TK35E08N1,S1X(S is an N-Channel enhancement mode MOSFET manufactured by TOSHIBA. This transistor is designed for switching and amplification applications. It features a drain-source voltage of 80V, a continuous drain current of 55A, and a power dissipation of 72W. The component is housed in a TO-220 package for through-hole mounting.
Key Features
- N-Channel Enhancement Mode
- 80V Drain-Source Voltage (VDS)
- 55A Continuous Drain Current (ID)
- 72W Power Dissipation (PD)
Applications
This MOSFET is commonly used in power management circuits and motor control systems. Its characteristics make it suitable for various electronic devices requiring efficient switching capabilities.
- DC-DC Converters
- Motor Driver Circuits
- Power Supplies
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