TK28N65W,S1F(S – TOSHIBA
Part Number:
TK28N65W,S1F(S
Manufacturer:
Date Code:
UKN
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N‑Channel MOSFET, 650 V, 27.6 A (Ta), 230 W (Tc), TO‑247 Package
Datasheet:
Spotted a problem with product information? – let us know
ORDER NOW
Stock Quantity: 8
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 4.99 |
| 10+ | |
| 50+ | |
| 100+ |
8 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
- We can ship on your DHL or UPS account if required
- Any import duties or taxes are the responsibility of the receiver
Product Details:
Overview
The TK28N65W,S1F(S is a silicon N-channel MOSFET manufactured by TOSHIBA. This component is designed for switching applications requiring high voltage and current handling capabilities. It features a drain-source voltage rating of 650V and a continuous drain current of 27.6A (at Ta=25°C). The device is housed in a TO-247 package, providing efficient thermal dissipation with a power dissipation rating of 230W (at Tc=25°C).
Key Features
- N-Channel Enhancement Mode
- 650V Drain-Source Voltage (VDSS)
- 27.6A Continuous Drain Current (ID)
- TO-247 Package
- 230W Power Dissipation (PD)
Applications
This N-channel MOSFET is suitable for various power switching applications where efficient and reliable performance is required. Its high voltage and current ratings make it appropriate for demanding environments.
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- Motor control
Spotted a problem with product information? – let us know