TK20C60W,S1VQ(S2 – TOSHIBA
Part Number:
TK20C60W,S1VQ(S2
Manufacturer:
Date Code:
UKN
RoHS:
RoHS Compliant
MSL:
COO:
Description:
N‑Channel MOSFET, 600 V, 20 A (Ta), 165 W (Tc), I2PAK Package
Datasheet:
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Stock Quantity: 8
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 3.33 |
| 10+ | |
| 50+ | |
| 100+ |
8 in stock
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Product Details:
Overview
The TK20C60W,S1VQ(S2 is a silicon N-channel MOSFET manufactured by Toshiba. This component is designed for switching applications requiring high voltage and moderate current handling. It features a drain-source voltage rating of 600V and a continuous drain current of 20A (at a case temperature of 25°C). The device is supplied in an I2PAK package, suitable for surface mounting and efficient heat dissipation.
Key Features
- 600V Drain-Source Voltage (Vds)
- 20A Continuous Drain Current (Id) at Ta=25°C
- 165W Power Dissipation (Pd) at Tc=25°C
- N-Channel Enhancement Mode
Applications
This MOSFET is commonly used in power electronics circuits where efficient switching is needed. Its voltage and current ratings make it suitable for a range of applications requiring robust performance in demanding environments.
- Switch-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- High-Voltage DC-DC Converters
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