TK12Q60W,S1VQ(S – TOSHIBA
Part Number:
TK12Q60W,S1VQ(S
Manufacturer:
Date Code:
UKN
RoHS:
RoHS Compliant
MSL:
COO:
Description:
N‑Channel MOSFET, 600 V, 11.5 A, 100 W, I‑Pak, Through‑Hole
Datasheet:
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Stock Quantity: 60
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 1.27 |
| 10+ | |
| 50+ | |
| 100+ |
60 in stock
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Product Details:
Overview
The TK12Q60W,S1VQ(S is a silicon N-channel MOSFET manufactured by TOSHIBA. This transistor is designed for switching applications requiring a voltage rating of up to 600V and a continuous drain current of 11.5A. It features a power dissipation of 100W and is packaged in an I-Pak through-hole configuration for efficient heat management.
Key Features
- 600V Drain-Source Voltage (Vds)
- 11.5A Continuous Drain Current (Id)
- 100W Power Dissipation (Pd)
- N-Channel Enhancement Mode
Applications
This MOSFET is suitable for use in various power switching circuits and systems. Its voltage and current handling capabilities make it appropriate for applications needing robust and reliable performance.
- Switch-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- DC-DC Converters
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