TC58NVG0S3EBAI4 – TOSHIBA

Electronic Components
 
Part Number:
TC58NVG0S3EBAI4
 
 
Manufacturer:
 
 
Date Code:
15
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
 
 
Description:

NAND Flash, 1Gb, 3.3V, 43nm, SLC, NAND EEPROM

 
 
Datasheet:
 
 
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Product Details:

Overview

The TC58NVG0S3EBAI4 is a 1Gb NAND Flash memory device manufactured by Toshiba. This SLC (Single-Level Cell) NAND EEPROM operates at 3.3V and is fabricated using a 43nm process technology. It provides non-volatile storage for embedded systems and data logging applications requiring reliable memory.

Key Features

  • 1Gb Memory Capacity
  • SLC NAND Technology
  • 3.3V Operating Voltage
  • 43nm Process Node

Applications

This NAND flash memory is commonly used in applications requiring compact and durable data storage. Its low voltage operation makes it suitable for portable devices and energy-efficient systems. The TC58NVG0S3EBAI4 is designed for reliable performance in diverse operating conditions.

  • Embedded Systems
  • Data Loggers
  • Portable Electronics
 
 
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