NAND Flash, 1Gb, 3.3V, 43nm, SLC, NAND EEPROM
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The TC58NVG0S3EBAI4 is a 1Gb NAND Flash memory device manufactured by Toshiba. This SLC (Single-Level Cell) NAND EEPROM operates at 3.3V and is fabricated using a 43nm process technology. It provides non-volatile storage for embedded systems and data logging applications requiring reliable memory.
This NAND flash memory is commonly used in applications requiring compact and durable data storage. Its low voltage operation makes it suitable for portable devices and energy-efficient systems. The TC58NVG0S3EBAI4 is designed for reliable performance in diverse operating conditions.