SQM70060EL-GE3 – VISHAY
Part Number:
SQM70060EL-GE3
Manufacturer:
Date Code:
22
RoHS:
RoHS Compliant
MSL:
COO:
Description:
N-Channel 100 V 75A (Tc) 166W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet:
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Product Details:
Overview
The VISHAY SQM70060EL-GE3 is an N-Channel power MOSFET designed for efficient power switching. It features a drain-source voltage rating of 100 V and a continuous drain current capacity of 75 A at a case temperature of 25°C. This component dissipates up to 166 W (Tc) and is housed in a surface-mount TO-263 (D2PAK) package, suitable for high-power applications requiring compact integration.
Key Features
- 100 V Drain-Source Voltage
- 75 A Continuous Drain Current (Tc)
- 166 W Power Dissipation (Tc)
- N-Channel MOSFET
- TO-263 (D2PAK) Package
Applications
This power semiconductor is utilized in various electronic systems requiring robust current handling and voltage blocking. Its surface-mount design facilitates automated assembly in demanding environments.
- Power supply units
- Motor control circuits
- Automotive electronics
- Industrial power conversion
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