SQM120P10_10M1LGE3 – VISHAY

Part Number:

SQM120P10_10M1LGE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

P-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Datasheet:

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Product Details:

Overview

The VISHAY SQM120P10_10M1LGE3 is a P-Channel Power MOSFET designed for high-current switching applications. This device features a drain-source voltage rating of 100V and can handle a continuous drain current of 120A at a case temperature of 100°C, with a power dissipation of 375W. It is supplied in a surface-mount TO-263 (D2PAK) package, facilitating efficient thermal management and automated assembly.

Key Features

100V Drain-Source Voltage
120A Continuous Drain Current (Tc=100°C)
375W Power Dissipation (Tc=100°C)
P-Channel MOSFET
TO-263 (D2PAK) Package

Applications

This power semiconductor is suitable for various power conversion and control circuits requiring robust current handling. Its specifications make it ideal for demanding electronic systems.

Automotive Power Management
Industrial Motor Control
High-Power DC-DC Converters
Load Switching Circuits