SPW20N60C3FKSA1 – INFINEON

 
Part Number:
SPW20N60C3FKSA1
 
 
Manufacturer:
 
 
Date Code:
19+
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
MALAYSIA
 
 
Description:

N‑Channel MOSFET, 650 V, 20.7 A, TO247‑3 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The SPW20N60C3FKSA1 is an N-Channel enhancement mode Power MOSFET manufactured by Infineon Technologies. This device is designed for high-voltage, high-speed switching applications. It features a drain-source voltage rating of 650V and a continuous drain current of 20.7A. The component is supplied in a through-hole TO247-3 package.

Key Features

  • N-Channel enhancement mode
  • VDS = 650V
  • ID = 20.7A
  • RDS(on) = 0.19 Ohm (typical)

Applications

This MOSFET is suitable for use in power electronics circuits requiring efficient and reliable switching performance. Its high voltage and current capabilities make it appropriate for various industrial and consumer applications.

  • Switch-mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • Motor control circuits
 
 
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