SMBTA06E6327HTSA1 – INFINEON

Electronic Components
 
Part Number:
SMBTA06E6327HTSA1
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
AUSTRIA
 
 
Description:

Single NPN BJT, 80 V, 500 mA, 330 mW, SOT-23, SMD

 
 
Datasheet:
 
 
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Stock Quantity: 200

Selling Unit: Each

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200 in stock

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Product Details:

Overview

The SMBTA06E6327HTSA1 is a single NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This surface-mount device is housed in a SOT-23 package and designed for general-purpose amplification and switching applications. It features a collector-emitter voltage (Vceo) of 80V and a collector current (Ic) rating of 500mA, with a power dissipation of 330mW.

Key Features

  • NPN Transistor Polarity
  • 80V Collector-Emitter Voltage
  • 500mA Continuous Collector Current
  • SOT-23 Package

Applications

This NPN transistor is commonly utilized in various electronic circuits requiring signal amplification or switching capabilities. Its compact size and electrical characteristics make it suitable for diverse uses.

  • General Purpose Amplification
  • Low-Side Switching
  • Driver Circuits
 
 
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