Single NPN BJT, 80 V, 500 mA, 330 mW, SOT-23, SMD
Stock Quantity: 200
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.29 |
| 10+ | |
| 50+ | |
| 100+ |
200 in stock
The SMBTA06E6327HTSA1 is a single NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This surface-mount device is housed in a SOT-23 package and designed for general-purpose amplification and switching applications. It features a collector-emitter voltage (Vceo) of 80V and a collector current (Ic) rating of 500mA, with a power dissipation of 330mW.
This NPN transistor is commonly utilized in various electronic circuits requiring signal amplification or switching capabilities. Its compact size and electrical characteristics make it suitable for diverse uses.