SIZF920DT-T1-GE3 – VISHAY

Part Number:

SIZF920DT-T1-GE3

Manufacturer:

VISHAY

Date Code:

2024

RoHS:

RoHS Compliant

MSL:

COO:

TAIWAN

Description:

Dual N-Channel MOSFET, 30 V (D-S), Standard Package

Datasheet:

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Stock Quantity: 124

Selling Unit: Each

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124 in stock

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Product Details:

Overview

The SIZF920DT-T1-GE3 is a dual N-Channel enhancement mode MOSFET manufactured by VISHAY. This component is designed for power switching applications, providing efficient performance with a drain-source voltage rating of 30V. It is supplied in a standard surface-mount package, facilitating automated assembly processes.

Key Features

Dual N-Channel configuration
30V Drain-Source Voltage (Vds)
Enhancement Mode operation
Surface Mount Device (SMD)

Applications

This dual N-Channel MOSFET is commonly used in various electronic systems requiring power control and switching. Its characteristics make it suitable for deployment in power management circuits and load switching scenarios.

DC-DC converters
Load switching
Power management systems