SIS862DN-T1-GE3 – VISHAY

Part Number:

SIS862DN-T1-GE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 60 V, 40 A, 3.7 W/52 W, PowerPAK® 1212-8, Surface Mount

Datasheet:

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Product Details:

Overview

The SIS862DN-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for switching and amplification applications, offering a drain-source voltage of 60V and a continuous drain current of 40A. It is available in a PowerPAK® 1212-8 surface mount package and has a power dissipation rating of 3.7W or 52W depending on the operating conditions.

Key Features

N-Channel Enhancement Mode
VDS: 60V
ID: 40A
RDS(on) = 9.8 mΩ at VGS = 10V

Applications

This MOSFET is commonly used in power management circuits and load switching. Its characteristics make it suitable for a variety of industrial and consumer electronics applications requiring efficient power control.

DC-DC Converters
Load Switching
Motor Control