SIHP10N40D-GE3 – VISHAY
Part Number:
SIHP10N40D-GE3
Manufacturer:
Date Code:
N/A
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
MOSFET, N-Ch, 400V, 10A, 147W, TO-220AB, Through-Hole
Datasheet:
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Stock Quantity: 88
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 1.46 |
| 10+ | |
| 50+ | |
| 100+ |
88 in stock
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Product Details:
Overview
The SIHP10N40D-GE3 is a discrete N-Channel MOSFET manufactured by VISHAY. This power MOSFET is designed for switching and amplification applications, offering a drain-source voltage rating of 400V and a continuous drain current of 10A. It features a power dissipation of 147W and is packaged in a TO-220AB through-hole configuration, facilitating easy mounting and thermal management.
Key Features
- N-Channel Enhancement Mode
- 400V Drain-Source Voltage (Vds)
- 10A Continuous Drain Current (Id)
- 147W Power Dissipation (Pd)
Applications
This MOSFET is commonly utilized in power electronics circuits requiring efficient switching at moderate voltages. Its characteristics make it suitable for various industrial and consumer applications where power control is essential.
- Switch-Mode Power Supplies (SMPS)
- Motor Control Circuits
- DC-DC Converters
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