SIHD186N60EF-GE3 – VISHAY
Part Number:
SIHD186N60EF-GE3
Manufacturer:
Date Code:
N/A
RoHS:
RoHS Compliant
MSL:
1
COO:
N/A
Description:
N-Channel MOSFET, 600V, 19A, DPAK, Vishay SIHD186N60EF-GE3
Datasheet:
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Stock Quantity: 447
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 1.71 |
| 10+ | |
| 50+ | |
| 100+ |
447 in stock
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Product Details:
Overview
The Vishay SIHD186N60EF-GE3 is an N-Channel MOSFET designed for high-voltage switching applications. This component features a drain-source voltage rating of 600V and a continuous drain current of 19A. It is supplied in a DPAK package, offering efficient thermal performance for power electronics designs.
Key Features
- N-Channel MOSFET
- 600V Drain-Source Voltage
- 19A Continuous Drain Current
- DPAK Package
Applications
This MOSFET is suitable for use in various power management and switching circuits. Its voltage and current capabilities make it appropriate for implementations requiring efficient and reliable operation.
- Switch-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- Motor control
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