SIAA00DJ-T1-GE3 – VISHAY

 
Part Number:
SIAA00DJ-T1-GE3
 
 
Manufacturer:
 
 
Date Code:
19+
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
CHINA
 
 
Description:

N-Channel MOSFET, 25V, 20.1A, 3.5W, PowerPAK® SC-70-6, Surface Mount.

 
 
Datasheet:
 
 
Spotted a problem with product information? – let us know
ORDER NOW

Stock Quantity: 500

Selling Unit: Each

Quantity Price (ex VAT)
1+ 3.33
10+
50+
100+

500 in stock

Contact us for volume pricing

  • Same day shipping if ordered before 14.00 GMT
  • 6 month warranty on all stock items
  • All stock held and shipped from our UK warehouse
  • Worldwide shipping available, contact us for a quotation
  • We can ship on your DHL or UPS account if required
  • Any import duties or taxes are the responsibility of the receiver
 
Product Details:

Overview

The SIAA00DJ-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for switching and amplification applications, offering a drain-source voltage of 25V and a continuous drain current of 20.1A. It features a power dissipation of 3.5W and is supplied in a compact PowerPAK® SC-70-6 surface mount package, suitable for automated assembly.

Key Features

  • N-Channel Enhancement Mode
  • VDS: 25V
  • ID: 20.1A (Continuous)
  • Power Dissipation: 3.5W

Applications

This MOSFET is commonly used in various power management and control circuits. Its small form factor and efficient performance make it suitable for space-constrained applications requiring moderate power switching.

  • DC-DC Converters
  • Load Switching
  • Power Management in Portable Devices
 
 
Spotted a problem with product information? – let us know