SIA488DN-T1-GE3 – VISHAY

Part Number:

SIA488DN-T1-GE3

Manufacturer:

VISHAY

Date Code:

22+

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N‑Channel MOSFET, 40 V, 40 A, PPAK1212‑8 Package

Datasheet:

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Product Details:

Overview

The SIA488DN-T1-GE3 is a N-Channel enhancement mode MOSFET manufactured by VISHAY. This power transistor is designed for switching and amplification applications requiring efficient power management. It features a drain-source voltage rating of 40V and a continuous drain current capability of 40A. The device is supplied in a compact PPAK1212-8 surface mount package, suitable for high-density circuit board layouts.

Key Features

N-Channel MOSFET Technology
40V Drain-Source Voltage (Vds)
40A Continuous Drain Current (Id)
PPAK1212-8 Surface Mount Package

Applications

This N-Channel MOSFET is typically used in power management circuits, DC-DC converters, and load switching applications. Its efficient operation and compact size make it suitable for a variety of electronic devices.

Synchronous Rectification
DC-DC Conversion
Load Switching