SI9435BDY-T1-E3 – VISHAY

Electronic Components
 
Part Number:
SI9435BDY-T1-E3
 
 
Manufacturer:
 
 
Date Code:
2007+
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

P-Channel MOSFET, -30 V, -5.8 A, 0.045 Ohm, SO-8 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The SI9435BDY-T1-E3 is a P-Channel MOSFET manufactured by VISHAY. This component is designed for switching and amplification applications, providing a maximum drain-source voltage of -30V and a continuous drain current of -5.8A. It features a low on-state resistance of 0.045 Ohm and is supplied in a standard SO-8 surface-mount package.

Key Features

  • P-Channel Enhancement Mode
  • Vds: -30V Drain-Source Voltage
  • Ids: -5.8A Continuous Drain Current
  • Rds(on): 0.045 Ohm @ Vgs=-10V

Applications

This P-Channel MOSFET is commonly used in various power management and load switching circuits. Its characteristics make it suitable for deployment in portable devices and battery-powered systems where efficient power control is required.

  • DC-DC Converters
  • Load Switching
  • Power Management Circuits
 
 
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