SI5441BDC-T1-GE3 – VISHAY

Part Number:

SI5441BDC-T1-GE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

P-Channel MOSFET, 20 V, 4.4 A, 1.3 W, Surface Mount, 1206-8 ChipFET™

Datasheet:

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Product Details:

Overview

The SI5441BDC-T1-GE3 is a P-Channel MOSFET manufactured by VISHAY. This surface mount transistor is designed for switching and amplification applications, offering a drain-source voltage of 20V and a continuous drain current of 4.4A. It features a power dissipation rating of 1.3W and is housed in a compact 1206-8 ChipFET™ package.

Key Features

P-Channel Enhancement Mode
Vds: 20V Drain-Source Voltage
Ids: 4.4A Continuous Drain Current
Pd: 1.3W Power Dissipation
ChipFET™ 1206-8 Package

Applications

This MOSFET is commonly used in portable devices and power management circuits where space is a constraint. Its characteristics make it suitable for load switching and small signal amplification in various electronic systems.

Load Switching
DC-DC Conversion
Power Management