N-Channel MOSFET, 30V, 10A, 0.022Ω Rds(on), SO-8.
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The SI4900DY-T1-E3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for switching and amplification applications, offering a drain-source voltage of 30V and a continuous drain current of 10A. It features a low on-state resistance (Rds(on)) of 0.022Ω and is supplied in a compact SO-8 package.
This MOSFET is commonly used in power management circuits and load switching. Its characteristics make it suitable for various electronic systems requiring efficient and controlled current flow.