SI1013R-T1-GE3 – VISHAY

Part Number:

SI1013R-T1-GE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

P-Channel MOSFET, 20V, 350mA, 150mW, SC-75A, Surface Mount

Datasheet:

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Product Details:

Overview

The SI1013R-T1-GE3 is a P-Channel MOSFET manufactured by VISHAY. This surface-mount transistor is designed for low-power switching applications. It features a drain-source voltage rating of 20V and a continuous drain current of 350mA. The device is housed in a compact SC-75A package.

Key Features

P-Channel Enhancement Mode
20V Drain-Source Voltage (Vds)
350mA Continuous Drain Current (Id)
150mW Power Dissipation
SC-75A Package

Applications

This P-Channel MOSFET is commonly used in portable devices and other low-power circuits where efficient switching is required. Its small size and surface-mount design make it suitable for high-density circuit boards.

Load Switching
Portable Electronics
DC-DC Conversion