SHF0189Z – RFMD

 
Part Number:
SHF0189Z
 
 
Manufacturer:
 
 
Date Code:
08+
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
 
 
Description:

GaAs, N‑Channel, Heterojunction FET, C Band, RF Small Signal Transistor

 
 
Datasheet:
 
 
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Product Details:

Overview

The SHF0189Z is a gallium arsenide (GaAs) N-Channel Heterojunction Field Effect Transistor (HFET) manufactured by RFMD. This C-Band RF small signal transistor is designed for applications requiring low noise and high gain at microwave frequencies. The component is supplied in a compact package suitable for surface mount assembly.

Key Features

  • GaAs Heterojunction FET Technology
  • N-Channel Configuration
  • C-Band Operation
  • Small Signal Amplifier

Applications

This RF transistor is typically used in receiver front-ends and low noise amplifier (LNA) stages. Its characteristics make it suitable for various communication and radar systems.

  • Radar Systems
  • Communication Receivers
  • Low Noise Amplifiers
 
 
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