SDMN10H120SE-13 – DIODES INCORPORATED

Part Number:

SDMN10H120SE-13

Manufacturer:

DIODES INCORPORATED

Date Code:

18+

RoHS:

RoHS Compliant

MSL:

COO:

Description:

MOSFET, N-CH, 100V, 549pF, 10nC

Datasheet:

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Product Details:

Overview

The SDMN10H120SE-13 is a discrete N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This MOSFET is designed for power switching applications requiring efficient energy transfer. It features a drain-source voltage rating of 100V and low gate charge, packaged in a standard PowerDI5060-8.

Key Features

N-Channel Enhancement Mode
100V Drain-Source Voltage (Vds)
549pF Gate-Source Capacitance (Cgs)
10nC Gate Charge (Qg)

Applications

This MOSFET is commonly implemented in circuits requiring efficient and controlled switching. Its characteristics make it suitable for use in a variety of power management scenarios, offering reliable performance in demanding environments.

DC-DC Converters
Power Supplies
Motor Control