SCT2750NYTB – ROHM
Part Number:
SCT2750NYTB
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
SOUTH KOREA
Description:
SiC Power MOSFET, N-Ch, 6A, 1700V, 0.75Ω, Vgs 18V/2.8V, TO-247 Package
Datasheet:
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Stock Quantity: 6
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 5.25 |
| 10+ | |
| 50+ | |
| 100+ |
6 in stock
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Product Details:
Overview
The SCT2750NYTB is a Silicon Carbide (SiC) Power MOSFET manufactured by ROHM. This N-Channel enhancement mode device is designed for high-voltage, high-frequency power switching applications. It features a drain-source voltage rating of 1700V and a continuous drain current of 6A. The on-resistance (Rds(on)) is typically 0.75Ω. Gate-source voltage threshold is 2.8V (min) and 18V (max). It is supplied in a TO-247 package.
Key Features
- 1700V Drain-Source Voltage (Vds)
- 6A Continuous Drain Current (Id)
- 0.75Ω On-Resistance (Rds(on))
- Silicon Carbide (SiC) Technology
Applications
This SiC Power MOSFET is suitable for use in power electronic systems that require high efficiency and reliability. Its high voltage and current capabilities make it ideal for demanding environments.
- Solar Inverters
- Power Factor Correction (PFC) circuits
- High Voltage DC-DC Converters
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