SBC847BDW1T1G – ONSEMI
Part Number:
SBC847BDW1T1G
Manufacturer:
Date Code:
22+
RoHS:
RoHS Compliant
MSL:
COO:
CHINA
Description:
Dual NPN Transistor, 45V, 100mA, 6-Pin SOT-363
Datasheet:
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Stock Quantity: 14995
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.52 |
| 10+ | |
| 50+ | |
| 100+ |
14995 in stock
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- 6 month warranty on all stock items
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Product Details:
Overview
The SBC847BDW1T1G is a dual NPN bipolar junction transistor manufactured by ONSEMI. This component features two general-purpose transistors integrated into a single 6-pin SOT-363 surface-mount package. It is designed for low to medium current amplification and switching applications, with a collector-emitter voltage rating of 45V and a collector current of 100mA.
Key Features
- Dual NPN Transistor Configuration
- Collector-Emitter Voltage (Vceo): 45V
- Collector Current (Ic): 100mA
- Surface Mount Technology (SMT)
- SOT-363 Package
Applications
This dual NPN transistor is commonly used in various electronic circuits where signal amplification or switching is required. Its small size and dual configuration make it suitable for compact designs.
- General Purpose Amplification
- Switching Circuits
- Driver Circuits
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